The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
DTB113ZK
View detailed images (4)

DTB113ZK

SKU: DTB113ZK
DTB113ZK Transistor Silicon NPN CASE: SOT346 MAKE: Rohm Semiconductor
Datasheet
DTB113ZK Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT346
Manufacturer Rohm Semiconductor
Mat. Silicon Logic
Polarity Pre-Biased-PNP
Mat. Struct. PNP
Pinout Equivalence Number N/A
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 56
SMD Transistor Code G11
Built in Bias Resistor R1 1 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 0.1
SKU 351823
Back