DTB114E
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DTB114E

SKU: DTB114E
DTB114E Transistor Silicon PNP CASE: SOT23 MAKE: Generic
Datasheet
DTB114E Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT23
Manufacturer ROHM
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 56
SMD Transistor Code BB4E
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1430388
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