DTB114EN3
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DTB114EN3

SKU: DTB114EN3
DTB114EN3 Transistor Silicon PNP CASE: SOT23 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case SOT23
Manufacturer Generic
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 56
SMD Transistor Code F14
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 1
SKU 1430389
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