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DTB123EK
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DTB123EK

SKU: DTB123EK
DTB123EK Transistor Silicon NPN CASE: SOT346 MAKE: Rohm Semiconductor
Datasheet
DTB123EK Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT346
Manufacturer Rohm Semiconductor
Mat. Silicon Logic
Polarity Pre-Biased-PNP
Mat. Struct. PNP
Pinout Equivalence Number N/A
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN 39
SMD Transistor Code F12
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 2.2 kOhm
Typical Resistor Ratio R1/R2 1
SKU 351830
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