DTD113Z
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DTD113Z

SKU: DTD113Z
DTD113Z Transistor Silicon Pre-Biased-NPN CASE: TO92 MAKE: Generic
Datasheet
DTD113Z Datasheet
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case TO92
Manufacturer ROHM
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.625 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 82
SMD Transistor Code DB3Z
Built in Bias Resistor R1 1 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 0.1
SKU 718220
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