DTD113ZU
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DTD113ZU

SKU: DTD113ZU
DTD113ZU Transistor Silicon NPN CASE: UMT3 MAKE: Rohm Semiconductor
Datasheet
DTD113ZU Datasheet
Product specifications
Type Transistor Silicon NPN
Case UMT3
Manufacturer Rohm Semiconductor
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 82
SMD Transistor Code T106
Built in Bias Resistor R1 1 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 0.1
SKU 351957
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