DTD114E
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DTD114E

SKU: DTD114E
DTD114E Transistor Silicon Pre-Biased-NPN CASE: SOT23 MAKE: Generic
Datasheet
DTD114E Datasheet
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT23
Manufacturer ROHM
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 56
SMD Transistor Code DB4E
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 1
SKU 718219
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