DTD123EK

SKU: DTD123EK

DTD123EK Transistor Silicon NPN CASE: SOT346 MAKE: Rohm Semiconductor

Datasheet

DTD123EK Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT346
Manufacturer	Rohm Semiconductor
Mat.	Silicon Logic
Polarity	Pre-Biased-NPN
Mat. Struct.	NPN
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.2 W
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	140 MHz
Forward Current Transfer Ratio (hFE), MIN	39
SMD Transistor Code	F22
Built in Bias Resistor R1	2.2 kOhm
Built in Bias Resistor R2	2.2 kOhm
Typical Resistor Ratio R1/R2	1
SKU	351961

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