DTD123ES

SKU: DTD123ES

DTD123ES Transistor Silicon Pre-Biased-NPN CASE: SC72 MAKE: Rohm Semiconductor

Datasheet

DTD123ES Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon Pre-Biased-NPN
Case	SC72
Manufacturer	Rohm Semiconductor
Mat.	Silicon Logic
Polarity	Pre-Biased-NPN
Mat. Struct.	NPN
Pinout Equivalence Number	3-10
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.3 W
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	150 °C
Transition Frequency (ft):	140 MHz
Forward Current Transfer Ratio (hFE), MIN	39
Built in Bias Resistor R1	2.2 kOhm
Built in Bias Resistor R2	2.2 kOhm
Typical Resistor Ratio R1/R2	1
SKU	351962

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