DTD123Y
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DTD123Y

SKU: DTD123Y
DTD123Y Transistor Silicon Pre-Biased-NPN CASE: SOT23 MAKE: Generic
Datasheet
DTD123Y Datasheet
Product specifications
Equivalent DTD123
Type Transistor Silicon Pre-Biased-NPN
Case SOT23
Manufacturer ROHM
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 56
SMD Transistor Code E4
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 0.22
SKU 718215
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