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DTD143ES
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DTD143ES

SKU: DTD143ES
DTD143ES Transistor Silicon Pre-Biased-NPN CASE: SOT23 MAKE: Rohm Semiconductor
Datasheet
DTD143ES Datasheet
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT23
Manufacturer Rohm Semiconductor
Mat. Silicon Logic
Polarity Pre-Biased-NPN
Mat. Struct. NPN
Pinout Equivalence Number 3-10
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 140 MHz
Forward Current Transfer Ratio (hFE), MIN 47
Built in Bias Resistor R1 4.7 kOhm
Built in Bias Resistor R2 4.7 kOhm
Typical Resistor Ratio R1/R2 1
SKU 351971
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