DTD513ZM
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DTD513ZM

SKU: DTD513ZM
DTD513ZM Transistor Silicon Pre-Biased-NPN CASE: SOT623F MAKE: Rohm Semiconductor
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT623F
Manufacturer Rohm Semiconductor
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Emitter Voltage |Vce| 12 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 260 MHz
Forward Current Transfer Ratio (hFE), MIN 140
Built in Bias Resistor R1 1 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 0.1
SKU 568829
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