DTD543EE
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DTD543EE

SKU: DTD543EE
DTD543EE Transistor Silicon Pre-Biased-NPN CASE: SOT416 MAKE: Rohm Semiconductor
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT416
Manufacturer Rohm Semiconductor
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Emitter Voltage |Vce| 12 V
Maximum Emitter-Base Voltage |Veb| 12 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 260 MHz
Forward Current Transfer Ratio (hFE), MIN 115
Built in Bias Resistor R1 4.7 kOhm
Built in Bias Resistor R2 4.7 kOhm
Typical Resistor Ratio R1/R2 1
SKU 568832
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