DTDG14GP
View detailed images (12)

DTDG14GP

SKU: DTDG14GP
DTDG14GP Transistor Silicon NPN CASE: SOT89 MAKE: Rohm Semiconductor
Datasheet
DTDG14GP Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT89
Manufacturer Rohm Semiconductor
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN 300
SMD Transistor Code E01
Built in Bias Resistor R2 10 kOhm
SKU 351973
Back