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DTDG23YP
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DTDG23YP

SKU: DTDG23YP
DTDG23YP Transistor Silicon NPN CASE: SOT89 MAKE: Rohm Semiconductor
Datasheet
DTDG23YP Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT89
Manufacturer Rohm Semiconductor
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 1.5 W
Maximum Collector-Emitter Voltage |Vce| 60 V
Maximum Emitter-Base Voltage |Veb| 40 V
Maximum Collector Current |Ic max| 1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN 300
SMD Transistor Code E02
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 0.22
SKU 351974
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