DTN9000T

SKU: DTN9000T

DTN9000T Transistor Silicon NPN CASE: TO237 MAKE: DIO

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO237
Manufacturer	DIO
Vbr CBO	450
Vbr CEO	400
Max. PD (W)	830m
C(ob) (F)	8.0p
Derate (Amb) (W/°C)	6.7m
hfe	30
Ic Max. (A)	500m
Icbo Max. @Vcb Max. (A)	100u
Polarity	NPN
Trans. Freq (Hz) Min.	50M
@VCE (test) (V)	10
Oper. Temp (°C) Max.	150
@Ic (A)	20m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.83 W
Maximum Collector-Base Voltage \|Vcb\|	450 V
Maximum Collector-Emitter Voltage \|Vce\|	400 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	0.5 A
Max. Operating Junction Temperature (Tj)	150 °C
Collector Capacitance (Cc)	8 pF
Transition Frequency (ft):	50 MHz
Forward Current Transfer Ratio (hFE), MIN	30
SKU	1251907

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