ED1602D

ED1602D

SKU: ED1602D
ED1602D Transistor Silicon PNP CASE: TO92 MAKE: National Semiconductor - NSC
Datasheet
ED1602D Datasheet
Product specifications
Type Transistor Silicon PNP
Case TO92
Manufacturer National Semiconductor - NSC
Vbr CBO 35
Vbr CEO 30
Max. PD (W) 600m
Derate (Amb) (W/°C) 208u
hfe 170
Ic Max. (A) 100m
Icbo Max. @Vcb Max. (A) 10n
Polarity PNP
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 150
@Ic (A) 2.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.6 W
Maximum Collector-Base Voltage |Vcb| 35 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 4 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 290
SKU 1247472
Back