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EMB10
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EMB10

SKU: EMB10
EMB10 Transistor Silicon PNP CASE: SOT666 MAKE: Rohm Semiconductor
Datasheet
EMB10 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT666
Manufacturer Rohm Semiconductor
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SMD Transistor Code B10
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.047
SKU 567236
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