EMB11
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EMB11

SKU: EMB11
EMB11 Transistor Silicon PNP CASE: SOT666 MAKE: Rohm Semiconductor
Datasheet
EMB11 Datasheet
Product specifications
Type Transistor Silicon PNP
Case SOT666
Manufacturer Rohm Semiconductor
Polarity Pre-Biased-PNP
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 10 V
Maximum Collector Current |Ic max| 0.05 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SMD Transistor Code B11
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 10 kOhm
Typical Resistor Ratio R1/R2 1
SKU 567237
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