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EMD4DXV6
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EMD4DXV6

SKU: EMD4DXV6
EMD4DXV6 Transistor Silicon Pre-Biased-NPN - PNP CASE: SOT563 MAKE: Generic
Datasheet
EMD4DXV6 Datasheet
Product specifications
Type Transistor Silicon Pre-Biased-NPN - PNP
Case SOT563
Manufacturer ON Semiconductor
Polarity Pre-Biased-NPN*PNP
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 80
SMD Transistor Code U7
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.21
SKU 1430967
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