EMG11
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EMG11

SKU: EMG11
EMG11 Transistor Silicon Pre-Biased-NPN CASE: SOT553 MAKE: Generic
Datasheet
EMG11 Datasheet
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT553
Manufacturer ROHM
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 80
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.047
SKU 1430991
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