EMG5DXV5T1
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EMG5DXV5T1

SKU: EMG5DXV5T1
EMG5DXV5T1 Transistor Silicon Pre-Biased-NPN CASE: SOT553 MAKE: Generic
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT553
Manufacturer Generic
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.23 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 80
SMD Transistor Code UF
Built in Bias Resistor R1 10 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.21
SKU 1430999
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