EMH10
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EMH10

SKU: EMH10
EMH10 Transistor Silicon Pre-Biased-NPN CASE: SOT666 MAKE: Rohm Semiconductor
Datasheet
EMH10 Datasheet
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case SOT666
Manufacturer Rohm Semiconductor
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.15 W
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 80
SMD Transistor Code H10
Built in Bias Resistor R1 2.2 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.047
SKU 567245
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