EN1132

EN1132

SKU: EN1132
EN1132 Transistor Silicon PNP CASE: TO106 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO106
Manufacturer Generic
Vbr CBO 50
Vbr CEO 35
Max. PD (W) 300m
C(ob) (F) 45p
Derate (Amb) (W/°C) 3.0m
hfe 30
Icbo Max. @Vcb Max. (A) 1.0u
Polarity PNP
Trans. Freq (Hz) Min. 60M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 125
@Ic (A) 150m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 50 V
Maximum Collector-Emitter Voltage |Vce| 35 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.5 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 45 pF
Transition Frequency (ft): 60 MHz
Forward Current Transfer Ratio (hFE), MIN 30
SKU 181024
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