EN2907

EN2907

SKU: EN2907
EN2907 Transistor Silicon PNP CASE: TO18 MAKE: Generic
Product specifications
Type Transistor Silicon PNP
Case TO18
Manufacturer Generic
Vbr CBO 60
Vbr CEO 40
Max. PD (W) 200m
C(ob) (F) 8.0p
Derate (Amb) (W/°C) 2.0m
hfe 100
Ic Max. (A) 600m
Icbo Max. @Vcb Max. (A) 50n
Polarity PNP
Trans. Freq (Hz) Min. 150M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 125
@Ic (A) 150m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.6 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 200 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 181044
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