EN930

EN930

SKU: EN930
EN930 Transistor Silicon NPN CASE: TO106 MAKE: Generic
Datasheet
EN930 Datasheet
Product specifications
Type Transistor Silicon NPN
Case TO106
Manufacturer ON Semiconductor
Vbr CBO 45
Vbr CEO 45
Max. PD (W) 200m
C(ob) (F) 8.0p
Derate (Amb) (W/°C) 2.0m
hfe 600=
Ic Max. (A) 30m
Icbo Max. @Vcb Max. (A) 50n
Polarity NPN
Trans. Freq (Hz) Min. 30M
@VCE (test) (V) 5.0
Oper. Temp (°C) Max. 125
@Ic (A) 1.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 45 V
Maximum Collector-Emitter Voltage |Vce| 45 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.03 A
Max. Operating Junction Temperature (Tj) 125 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 30 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 181088
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