| Weight |
0.01 kg
|
| Type |
Transistor Silicon NPN |
| Case |
TO5 |
| Manufacturer |
Electronic Transistor |
| Vbr CBO |
120 |
| Vbr CEO |
120 |
| Max. PD (W) |
800m |
| C(ob) (F) |
15p |
| Derate (Amb) (W/°C) |
5.2m |
| hfe |
35 |
| Icbo Max. @Vcb Max. (A) |
2.0u |
| Polarity |
NPN |
| Trans. Freq (Hz) Min. |
20M |
| @VCE (test) (V) |
4.0 |
| Oper. Temp (°C) Max. |
175 |
| @Ic (A) |
50m |
| Pinout Equivalence Number |
3-12 |
| Surface Mounted Yes/No |
NO |
| Maximum Collector Power Dissipation (Pc) |
0.8 W |
| Maximum Collector-Base Voltage |Vcb| |
120 V |
| Maximum Collector-Emitter Voltage |Vce| |
120 V |
| Maximum Emitter-Base Voltage |Veb| |
4 V |
| Max. Operating Junction Temperature (Tj) |
175 °C |
| Collector Capacitance (Cc) |
15 pF |
| Transition Frequency (ft): |
20 MHz |
| Forward Current Transfer Ratio (hFE), MIN |
35 |
| SKU |
536228 |