ESM2012DV

SKU: ESM2012DV

ESM2012DV Transistor Silicon NPN CASE: SOT227A MAKE: ST Microelectronics - STM

Price:

£62.39 Inc. VAT (£51.99 Ex. VAT)

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Datasheet

ESM2012DV Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT227A
Manufacturer	ST Microelectronics - STM
Vbr CEO	125
Ckts Per Dev.	1
Max. PD (W)	175
t(f) Max. (S)	300n
Ic Max. (A)	120
@Ic (test) (A)	100
Polarity	NPN
Therm Res. ÚJC (°C/W)	0.9
Therm Res. (J-C)	0.7
VCE(sat) Max.	2.0
Oper. Temp (°C) Max.	150
Isolated Case (Y/N)	Yes
Pinout Equivalence Number	4-106
Maximum Collector Power Dissipation (Pc)	175 W
Maximum Collector-Base Voltage \|Vcb\|	150 V
Maximum Collector-Emitter Voltage \|Vce\|	125 V
Maximum Emitter-Base Voltage \|Veb\|	7 V
Maximum Collector Current \|Ic max\|	120 A
Max. Operating Junction Temperature (Tj)	175 °C
Forward Current Transfer Ratio (hFE), MIN	1200
SKU	82009

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