Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
ST Microelectronics - STM |
Case |
SOT227A |
Vbr CEO |
300 |
Ckts Per Dev. |
1 |
Max. PD (W) |
225 |
t(f) Max. (S) |
0.6u |
Ic Max. (A) |
100 |
@Ic (test) (A) |
85 |
Polarity |
NPN |
Therm Res. ÚJC (°C/W) |
1.2 |
Therm Res. (J-C) |
.55 |
VCE(sat) Max. |
2.2 |
Oper. Temp (°C) Max. |
150 |
Isolated Case (Y/N) |
Yes |
Pinout Equivalence Number |
4-106 |
Maximum Collector Power Dissipation (Pc) |
225 W |
Maximum Collector-Base Voltage |Vcb| |
400 V |
Maximum Collector-Emitter Voltage |Vce| |
300 V |
Maximum Emitter-Base Voltage |Veb| |
7 V |
Maximum Collector Current |Ic max| |
100 A |
Max. Operating Junction Temperature (Tj) |
175 °C |
Forward Current Transfer Ratio (hFE), MIN |
2000 |
SKU |
81985 |