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ESM5671
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ESM5671

SKU: ESM5671
ESM5671 Transistor Silicon NPN CASE: TO3 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Generic
Vbr CBO 120
Vbr CEO 90
Max. PD (W) 150
t(f) Max. (S) 500n
Max. hFE 100
Min hFE 20
Ic Max. (A) 25
@Ic (test) (A) 15
Icbo Max. @Vcb Max. (A) 1.5m
Polarity NPN
Tr Max. (s) 1.5u
R(sat) (Û) 50m
Derate Above 25°C 833m
Trans. Freq (Hz) Min. 4.0M
Oper. Temp (°C) Max. 175
@VCE (V) 2.0
Pinout Equivalence Number 3-14
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 150 W
Maximum Collector-Base Voltage |Vcb| 120 V
Maximum Collector-Emitter Voltage |Vce| 90 V
Maximum Collector Current |Ic max| 25 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 4 MHz
Forward Current Transfer Ratio (hFE), MIN 20
SKU 713901
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