| Type | Transistor Silicon PNP | |
| Case | TO3 | |
| Manufacturer | Electronic Transistor | |
| Vbr CBO | 60 | |
| Vbr CEO | 50 | |
| Max. PD (W) | 150 | |
| Derate (Amb) (W/°C) | 2.0 | |
| Max. hFE | 250 | |
| Min hFE | 40 | |
| Ic Max. (A) | 7.0 | |
| @Ic (test) (A) | 3.0 | |
| Icbo Max. @Vcb Max. (A) | 1.0m | |
| Polarity | PNP | |
| R(sat) (Û) | 400m | |
| Oper. Temp (°C) Max. | 100 | |
| @VCE (V) | 2.0 | |
| Pinout Equivalence Number | 3-14 | |
| Surface Mounted Yes/No | NO | |
| Maximum Collector Power Dissipation (Pc) | 150 W | |
| Maximum Collector-Base Voltage |Vcb| | 60 V | |
| Maximum Collector-Emitter Voltage |Vce| | 50 V | |
| Maximum Collector Current |Ic max| | 7 A | |
| Max. Operating Junction Temperature (Tj) | 100 °C | |
| Forward Current Transfer Ratio (hFE), MIN | 40 | |
| SKU | 536245 | |