ETF81-050

SKU: ETF81-050

ETF81-050 Transistor Silicon NPN CASE: M101 MAKE: Fuji Semiconductor

Datasheet

ETF81-050 Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	M101
Manufacturer	Fuji Semiconductor
Vbr CBO	600
Vbr CEO	600
Ckts Per Dev.	1
Max. PD (W)	120
t(f) Max. (S)	2.0u
Min hFE	100
Ic Max. (A)	15
@Ic (test) (A)	15
Polarity	NPN
Tr Max. (s)	1.0u
Pinout Equivalence Number	N/A
Maximum Collector Power Dissipation (Pc)	120 W
Maximum Collector-Base Voltage \|Vcb\|	600 V
Maximum Collector-Emitter Voltage \|Vce\|	600 V
Maximum Emitter-Base Voltage \|Veb\|	6 V
Maximum Collector Current \|Ic max\|	15 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	100
SKU	183543

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