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ETP2008
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ETP2008

SKU: ETP2008
ETP2008 Transistor Silicon NPN CASE: TO5 MAKE: Electronic Transistor
Product specifications
Type Transistor Silicon NPN
Case TO5
Manufacturer Electronic Transistor
Vbr CBO 175
Vbr CEO 110
Max. PD (W) 800m
C(ob) (F) 7.0p
Derate (Amb) (W/°C) 5.3m
hfe 65
Icbo Max. @Vcb Max. (A) 2.0u
Polarity NPN
Trans. Freq (Hz) Min. 20M
@VCE (test) (V) 50i
Oper. Temp (°C) Max. 175
@Ic (A) 5.0m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 175 V
Maximum Collector-Emitter Voltage |Vce| 110 V
Maximum Emitter-Base Voltage |Veb| 5 V
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 7 pF
Transition Frequency (ft): 20 MHz
Forward Current Transfer Ratio (hFE), MIN 65
SKU 536246
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