Weight |
0.01 kg
|
Type |
Transistor Silicon NPN |
Manufacturer |
Vishay Semiconductor |
Case |
TO53 |
Vbr CBO |
60 |
Vbr CEO |
60 |
Max. PD (W) |
85 |
Max. hFE |
50 |
Min hFE |
10 |
Ic Max. (A) |
4.0 |
@Ic (test) (A) |
1.0 |
@Temp. (test) (°C) |
25 |
Ir @ Diff. Temp (A) |
1.0m |
VRRM |
1.0k |
Polarity |
NPN |
PD Max. (W) |
400m |
R(sat) (Û) |
5.0 |
1-Cycle Surge Current (A) |
70 |
@Temp (test) (°C) |
150 |
@Temp. (test) for Vf) |
25# |
Derate Above 25°C |
476m |
Vf Max. |
1.2 |
I(out) (If AVG) Max. |
2.0 |
Trans. Freq (Hz) Min. |
1.0M |
@Volts (test) (V) |
1.0k |
@If (test) |
2.0 |
Oper. Temp (°C) Max. |
140 |
@VCE (V) |
15 |
Ireg Nom. (A) |
1.1m |
V limit Max. |
1.7 |
Z(t) Max. (Û) |
650k |
Peak Oper. Volt |
100 |
Pinout Equivalence Number |
N/A |
Surface Mounted Yes/No |
NO |
Maximum Collector Power Dissipation (Pc) |
85 W |
Maximum Collector-Base Voltage |Vcb| |
60 V |
Maximum Collector-Emitter Voltage |Vce| |
60 V |
Maximum Collector Current |Ic max| |
4 A |
Max. Operating Junction Temperature (Tj) |
175 °C |
Transition Frequency (ft): |
1 MHz |
Forward Current Transfer Ratio (hFE), MIN |
10 |
SKU |
90418 |