F123

SKU: F123

F123 Transistor Silicon NPN CASE: TO53 MAKE: Generic

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO53
Manufacturer	Generic
Vbr CBO	35
Vbr CEO	35
Max. PD (W)	85
Max. hFE	50
Min hFE	10
Ic Max. (A)	4.0
@Ic (test) (A)	1.0
Polarity	NPN
PD Max. (W)	400m
R(sat) (Û)	5.0
Derate Above 25°C	476m
Trans. Freq (Hz) Min.	1.0M
Oper. Temp (°C) Max.	100
@VCE (V)	15
Ireg Nom. (A)	12m
V limit Max.	3.8
Z(t) Max. (Û)	80k
Peak Oper. Volt	100
Pinout Equivalence Number	N/A
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	85 W
Maximum Collector-Base Voltage \|Vcb\|	35 V
Maximum Collector-Emitter Voltage \|Vce\|	35 V
Maximum Collector Current \|Ic max\|	4 A
Max. Operating Junction Temperature (Tj)	100 °C
Transition Frequency (ft):	1 MHz
Forward Current Transfer Ratio (hFE), MIN	10
SKU	713704

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