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FA1F4M

SKU: FA1F4M

FA1F4M SI-NPN-DIGI - Case: SOT23 Make: NEC

Datasheet

FA1F4M Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT23
Manufacturer	NEC
Mat.	Silicon Logic
Polarity	Pre-Biased-NPN
Mat. Struct.	NPN
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.2 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	60
SMD Transistor Code	L32_L33
Built in Bias Resistor R1	22 kOhm
Built in Bias Resistor R2	22 kOhm
Typical Resistor Ratio R1/R2	1
SKU	352646

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