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FA1F4N
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FA1F4N

SKU: FA1F4N
FA1F4N Transistor Silicon NPN CASE: SOT23 MAKE: NEC
Datasheet
FA1F4N Datasheet
Product specifications
Type Transistor Silicon NPN
Case SOT23
Manufacturer NEC
Mat. Silicon Logic
Polarity Pre-Biased-NPN
Mat. Struct. NPN
Pinout Equivalence Number 3-12
Surface Mounted Yes/No YES
Maximum Collector Power Dissipation (Pc) 0.2 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 85
SMD Transistor Code L35
Built in Bias Resistor R1 22 kOhm
Built in Bias Resistor R2 47 kOhm
Typical Resistor Ratio R1/R2 0.47
SKU 713479
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