The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
FJNS3211R

FJNS3211R

SKU: FJNS3211R
FJNS3211R Transistor Silicon Pre-Biased-NPN CASE: TO92S MAKE: Fairchild Semiconductor
Datasheet
FJNS3211R Datasheet
Product specifications
Type Transistor Silicon Pre-Biased-NPN
Case TO92S
Manufacturer Fairchild Semiconductor
Polarity Pre-Biased-NPN
Maximum Collector Power Dissipation (Pc) 0.3 W
Maximum Collector-Base Voltage |Vcb| 40 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.1 A
Max. Operating Junction Temperature (Tj) 150 °C
Collector Capacitance (Cc) 3.7 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 100
Built in Bias Resistor R1 22 kOhm
SKU 538311
Back