FN1F4M

SKU: FN1F4M

FN1F4M Transistor Silicon NPN CASE: SOT23 MAKE: NEC

Datasheet

FN1F4M Datasheet

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	SOT23
Manufacturer	NEC
Mat.	Silicon Logic
Polarity	Pre-Biased-PNP
Mat. Struct.	PNP
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	YES
Maximum Collector Power Dissipation (Pc)	0.2 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	50 V
Maximum Emitter-Base Voltage \|Veb\|	10 V
Maximum Collector Current \|Ic max\|	0.1 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	60
SMD Transistor Code	M32
Built in Bias Resistor R1	22 kOhm
Built in Bias Resistor R2	22 kOhm
Typical Resistor Ratio R1/R2	1
SKU	353008

Back