The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
FT1607R
View detailed images (1)

FT1607R

SKU: FT1607R
FT1607R Transistor Silicon NPN CASE: M122 MAKE: Fujitsu
Product specifications
Type Transistor Silicon NPN
Case M122
Manufacturer Fujitsu
Vbr CBO 45
Vbr CEO 30
Max. PD (W) 5.0
Min hFE 80-
Ic Max. (A) 300m
@Ic (test) (A) 65m
Icbo Max. @Vcb Max. (A) 1.0u
Polarity NPN
Derate Above 25°C 40m
Trans. Freq (Hz) Min. 1.7G
Oper. Temp (°C) Max. 150
@VCE (V) 15
Pinout Equivalence Number 4-28
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 5 W
Maximum Collector-Base Voltage |Vcb| 45 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Collector Current |Ic max| 0.3 A
Max. Operating Junction Temperature (Tj) 175 °C
Transition Frequency (ft): 1.7GIT MHz
Forward Current Transfer Ratio (hFE), MIN 80
SKU 1282194
Back