| Type | Transistor Silicon PNP | |
| Case | TO50 | |
| Manufacturer | SGS Thomson | |
| Vbr CBO | 12 | |
| Vbr CEO | 12 | |
| Max. PD (W) | 175m | |
| C(ob) (F) | 6.0p | |
| Derate (Amb) (W/°C) | 1.0m | |
| t(f) Max. (S) | 75n+ | |
| hfe | 75 | |
| Icbo Max. @Vcb Max. (A) | 10u | |
| Polarity | PNP | |
| Tr Max. (s) | 60n | |
| Trans. Freq (Hz) Min. | 350M | |
| @VCE (test) (V) | .50 | |
| Oper. Temp (°C) Max. | 175 | |
| @Ic (A) | 30m | |
| Pinout Equivalence Number | 3-12 | |
| Surface Mounted Yes/No | YES | |
| Maximum Collector Power Dissipation (Pc) | 0.175 W | |
| Maximum Collector-Base Voltage |Vcb| | 12 V | |
| Maximum Collector-Emitter Voltage |Vce| | 12 V | |
| Max. Operating Junction Temperature (Tj) | 175 °C | |
| Collector Capacitance (Cc) | 6 pF | |
| Transition Frequency (ft): | 350 MHz | |
| Forward Current Transfer Ratio (hFE), MIN | 75 | |
| SKU | 573714 | |