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GE10001
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GE10001

SKU: GE10001
GE10001 SemiConductor - Case: TO3 Make: Generic
+ VAT 20% for UK purchases
Product specifications
Manufacturer Generic
Case TO3
Type Transistor Silicon NPN
Vbr CEO 400
Max. PD (W) 175
t(on) Delay (S) .20u
t(f) Max. (S) 2.4u
Max. hFE 400
Min hFE 40
Ic Max. (A) 20
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) 2.5m
Mat. Silicon Logic
Polarity NPN
Tr Max. (s) .60u
t(stor) Max. (S) 3.5u
Derate Above 25°C 1.0
@VCE (test) 5.0
Oper. Temp (°C) Max. 175
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 175 W
Maximum Collector-Base Voltage |Vcb| 500 V
Maximum Collector-Emitter Voltage |Vce| 400 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 20 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 325 pF
Forward Current Transfer Ratio (hFE), MIN 40
SKU 711687
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