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GE10007
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GE10007

SKU: GE10007
GE10007 Transistor Silicon NPN CASE: TO3 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Generic
Vbr CEO 400
Max. PD (W) 150
t(on) Delay (S) .20u
t(f) Max. (S) .50u
Max. hFE 300
Min hFE 30
Ic Max. (A) 10
@Ic (test) (A) 5.0
Icbo Max. @Vcb Max. (A) 2.5m
Mat. Silicon Logic
Polarity NPN
Tr Max. (s) .40u
t(stor) Max. (S) 1.5u
Derate Above 25°C .86
@VCE (test) 5.0
Oper. Temp (°C) Max. 175
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 175 W
Maximum Collector-Base Voltage |Vcb| 500 V
Maximum Collector-Emitter Voltage |Vce| 400 V
Maximum Emitter-Base Voltage |Veb| 8 V
Maximum Collector Current |Ic max| 10 A
Max. Operating Junction Temperature (Tj) 200 °C
Collector Capacitance (Cc) 325 pF
Forward Current Transfer Ratio (hFE), MIN 30
SKU 711681
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