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GE10022
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GE10022

SKU: GE10022
GE10022 Transistor Silicon NPN CASE: TO3 MAKE: Generic
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer Unknow
Vbr CEO 350
Max. PD (W) 250
t(on) Delay (S) .25u
t(f) Max. (S) .90u
Max. hFE 600
Min hFE 50
Ic Max. (A) 40
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) .25m
Mat. Silicon Logic
Polarity NPN
Tr Max. (s) 1.0u
t(stor) Max. (S) 2.5u
Derate Above 25°C 1.4
@VCE (test) 5.0
Oper. Temp (°C) Max. 175
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 250 W
Maximum Collector-Base Voltage |Vcb| 350 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 40 A
Max. Operating Junction Temperature (Tj) 175 °C
Forward Current Transfer Ratio (hFE), MIN 50
SKU 711674
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