GE5060

SKU: GE5060

GE5060 Transistor Silicon NPN CASE: TO3 MAKE: General Electric

Product specifications

Weight	0.01 kg
Type	Transistor Silicon NPN
Case	TO3
Manufacturer	General Electric
Vbr CEO	350
Max. PD (W)	125
t(f) Max. (S)	3.5u
Min hFE	40
Ic Max. (A)	20
Icbo Max. @Vcb Max. (A)	.25m
Mat.	Silicon Logic
Polarity	NPN
Tr Max. (s)	800n
t(stor) Max. (S)	8.0u
Derate Above 25°C	1.2
@VCE (test)	75
Oper. Temp (°C) Max.	150
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	125 W
Maximum Collector-Base Voltage \|Vcb\|	400 V
Maximum Collector-Emitter Voltage \|Vce\|	350 V
Maximum Emitter-Base Voltage \|Veb\|	8 V
Maximum Collector Current \|Ic max\|	20 A
Max. Operating Junction Temperature (Tj)	150 °C
Forward Current Transfer Ratio (hFE), MIN	100
SKU	711663

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