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GE6061
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GE6061

SKU: GE6061
GE6061 Transistor Silicon NPN CASE: TO3 MAKE: General Electric
Product specifications
Type Transistor Silicon NPN
Case TO3
Manufacturer General Electric
Vbr CEO 400
Max. PD (W) 125
t(f) Max. (S) 1.0u
Min hFE 30
Ic Max. (A) 20
@Ic (test) (A) 10
Icbo Max. @Vcb Max. (A) .25m
Mat. Silicon Logic
Polarity NPN
Tr Max. (s) .40u
t(stor) Max. (S) 2.5u
Derate Above 25°C 1.0
@VCE (test) 5.0
Oper. Temp (°C) Max. 150
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 125 W
Maximum Collector-Base Voltage |Vcb| 400 V
Maximum Collector-Emitter Voltage |Vce| 400 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 20 A
Max. Operating Junction Temperature (Tj) 150 °C
Forward Current Transfer Ratio (hFE), MIN 40
SKU 711659
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