The website uses cookies to understand site performance and process orders. We and our advertising partners also process personal data to deliver personalized and non-personalized advertising. By clicking OK, you explicitly consent to our tracking technologies and the processing of your data for ads personalization and conversion tracking. Click to learn more or change settings. 
    
GES1613
View detailed images (1)

GES1613

SKU: GES1613
GES1613 Transistor Silicon NPN CASE: TO236 MAKE: General Electric
Product specifications
Equivalent GES1613R
Type Transistor Silicon NPN
Case TO236
Manufacturer General Electric
Polarity NPN
Maximum Collector Power Dissipation (Pc) 0.8 W
Maximum Collector-Base Voltage |Vcb| 75 V
Maximum Collector-Emitter Voltage |Vce| 50 V
Maximum Emitter-Base Voltage |Veb| 7 V
Maximum Collector Current |Ic max| 0.6 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 25 pF
Transition Frequency (ft): 80 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 1431853
Back