GES2219

SKU: GES2219

GES2219 Transistor Silicon NPN CASE: TO236 MAKE: General Electric

Product specifications

Weight	0.01 kg
Equivalent	GES2219A
Type	Transistor Silicon NPN
Case	TO236
Manufacturer	General Electric
Vbr CBO	60
Vbr CEO	30
Max. PD (W)	800m
Derate (Amb) (W/°C)	5.3m
hfe	35
Ic Max. (A)	800m
Icbo Max. @Vcb Max. (A)	10n
Polarity	NPN
Trans. Freq (Hz) Min.	250M
@VCE (test) (V)	10
Oper. Temp (°C) Max.	150
@Ic (A)	100m
Pinout Equivalence Number	3-12
Surface Mounted Yes/No	NO
Maximum Collector Power Dissipation (Pc)	0.8 W
Maximum Collector-Base Voltage \|Vcb\|	60 V
Maximum Collector-Emitter Voltage \|Vce\|	30 V
Maximum Emitter-Base Voltage \|Veb\|	5 V
Maximum Collector Current \|Ic max\|	0.8 A
Max. Operating Junction Temperature (Tj)	175 °C
Collector Capacitance (Cc)	8 pF
Transition Frequency (ft):	250 MHz
Forward Current Transfer Ratio (hFE), MIN	35
SKU	1280724

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