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GES2221
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GES2221

SKU: GES2221
GES2221 Transistor Silicon NPN CASE: TO236 MAKE: General Electric
Product specifications
Equivalent GES2221R
Type Transistor Silicon NPN
Case TO236
Manufacturer General Electric
Vbr CBO 60
Vbr CEO 30
Max. PD (W) 360m
C(ob) (F) 3.5p
Derate (Amb) (W/°C) 3.6m
t(f) Max. (S) 285n+
hfe 40
Ic Max. (A) 400m
Icbo Max. @Vcb Max. (A) 10n
Polarity NPN
Tr Max. (s) 35n
Trans. Freq (Hz) Min. 275M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 150m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 60 V
Maximum Collector-Emitter Voltage |Vce| 30 V
Maximum Emitter-Base Voltage |Veb| 5 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN 40
SKU 711619
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