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GES2222A
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GES2222A

SKU: GES2222A
GES2222A Transistor Silicon NPN CASE: TO236 MAKE: General Electric
Product specifications
Equivalent GES2222AR
Type Transistor Silicon NPN
Case TO236
Manufacturer General Electric
Vbr CBO 75
Vbr CEO 40
Max. PD (W) 360m
C(ob) (F) 3.5p
Derate (Amb) (W/°C) 3.6m
t(f) Max. (S) 285n+
hfe 100
Ic Max. (A) 400m
Icbo Max. @Vcb Max. (A) 10n
Polarity NPN
Tr Max. (s) 35n
Trans. Freq (Hz) Min. 325M
@VCE (test) (V) 10
Oper. Temp (°C) Max. 150
@Ic (A) 150m
Pinout Equivalence Number 3-12
Surface Mounted Yes/No NO
Maximum Collector Power Dissipation (Pc) 0.5 W
Maximum Collector-Base Voltage |Vcb| 75 V
Maximum Collector-Emitter Voltage |Vce| 40 V
Maximum Emitter-Base Voltage |Veb| 6 V
Maximum Collector Current |Ic max| 0.8 A
Max. Operating Junction Temperature (Tj) 175 °C
Collector Capacitance (Cc) 8 pF
Transition Frequency (ft): 300 MHz
Forward Current Transfer Ratio (hFE), MIN 100
SKU 711616
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